Recent and Selected Publications - Welcome to Nanostructure Material and Devices Laboratory

Nanostructure Materials
&
Devices Laboratory

Recent and Selected Publications

I. Novel Hybrid Nanostructures for Energy Conversion

II. Biomimetic Coatings and Cell Adhesion

III. Quantum Dot Infrared Detectors

IV. Self-Assembled Quantum Dots

V. Directed Assembly of Nanostructures___

VI. Simulations of Stress in Semiconductor Nanostructures

VII. Nanoparticle Manipulation on Surfaces

I. Novel Hybrid Nanostructures for Energy Conversion

1. Siyuan Lu and Anupam Madhukar, "Nonradiative Resonant Excitation Transfer from Nanocrystal Quantum Dots to Adjacent Quantum Channels". Nano Letters, 7 (11), 3443 (2007)

2. Anupam Madhukar, Siyuan Lu, Atul Konkar, Yi Zhang, Max Ho, Steven M. Hughes and A. Paul Alivisatos, "Integrated Semiconductor Nanocrystal and Epitaxical Nanostructure Systems: Structural and Optical Behavior."
Nano Letters, 5 , 479 (2005)

3. Atul Konkar, Siyuan Lu, Anupam Madhukar, Steven M. Hughes and A. Paul Alivisatos, "Semiconductor Nanocrystal Quantum Dots on Single Crystal Semiconductor Substrates: High Resolution Transmission Electron Microscopy." Nano Letters, 5 , 969 (2005)

II. Biomimetic Coatings and Cell Adhesion

1 Siyuan Lu, Anubhuti Bansal, Walid Soussou, Theodore W. Berger, and Anupam Madhukar, "Receptor-Ligand-Based Specific Cell Adhesion on Solid Surfaces: Hippocampal Neuronal Cells on Bilinker Functionalized Glass." Nano Letters, 6 , 1977 (2006)

III. Quantum Dot Infrared Detectors

1. J. C. Campbell and A. Madhukar, "Quantum Dot Infrared Detectors." IEEE Quantum Electronics, 95 (2007)

2. Anupam Madhukar and Joe C. Campbell, "Quantum Dot Infrared Detectors" in "Semiconductor Nanostructures for Optoelectronic Applications". Ed. T. Steiner, Artec House Inc. (Norwood, MA) ch. 3. (2004)

3. Z. Ye, J.C. Campbell, Z. Chen, E.T. Kim, and A. Madhukar, "Noise and photoconductive gain in InAs quantum-dot infrared photodetectors." Applied Physics Letters 83, 1234 (2003)

4. E.T. Kim, Z. Chen, and A. Madhukar, "Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer." Applied Physics Letters 81, 3473 (2002)

5. E.T. Kim, Z. Chen, M. Ho, and A. Madhukar, "Tailoring mid- and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1-xAs capping layers" Journal of Vacuum Science and Technology B 20, 1188 (2002)

6. Z. Ye, J.C. Campbell, Z. Chen, E.T. Kim, and A. Madhukar, "Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection." Journal of Applied Physics 92, 4141 (2002)

7. Z. Ye, J.C. Campbell, Z. Chen, E.T. Kim, and A. Madhukar, "Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity." IEEE Journal of Quantum Electronics 38 1234, (2002)

8. Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, and J.C. Campbell, "InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region" Infrared Physics and Technology 42, 479 (2001)

9. E.T. Kim, Z. Chen, and A. Madhukar, "Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells." Applied Physics Letters 79, 3341 (2001)

IV. Self-Assembled Quantum Dots

1. Anupam Madhukar, "Stress Engineered Quantum dots: Nature's Way," in "Nano Optoelctronics: Concepts, Physics, and Devices", Ed. M. Grundmann, Springer-Verlag, (Berline 2002).

2. I. Mukhametzhanov, Z. Wei, R. Heitz, and A. Madhukar, "Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution." Applied Physics Letters 75, 85 (1999)

3. R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, and D. Bimberg, "Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots." Physical Review Letters 83, 4654 (1999)

4. I. Mukhametzhanov, R. Heitz, J. Zeng, P. Chen, and A. Madhukar, "Independent manipulation of density and size of stress-driven self-assembled quantum dots." Applied Physics Letters 73, 1841 (1998)

5. R. Heitz, I. Mukhametzhanov, P. Chen, and A. Madhukar, "Excitation transfer in self-organized asymmetric quantum dot pairs."
Physical Review B 58, R10151 (1998)

6.Anupam Madhukar, "A unified atomistic and kinetic framework for growth front morphology evolution and defect initiation in strained epitaxy." Journal of Crystal Growth 163, 149 (1996)

7. Q. Xie, A. Kalburge, P. Chen, and A. Madhukar, "Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs(001)." IEEE Photonics Technology Letters 8, 965 (1996)

8. N. P. Kobayashi, T. R. Ramachandran, P. Chen, and A. Madhukar, "In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)" Applied Physics Letters 68, 3299 (1996)

9. Q. Xie, A. Madhukar, P. Chen, and N. Nobayashi "Vertically Self-Organized InAs Quantum Box Islands on GaAs (100)"
Physical Review Letters 75, 2542 (1995)

10. Q. H. Xie, P. Chenl, A. Madhukar, "InAs island-induced-strain driven adatom migration during GaAs overlayer growth." Applied Physics Letters 65, 2051 (1994).

V. Directed Assembly of Nanostructures:
_______- Engineered Stress-Induced Assembly of Nanostructures (ESIAN)

1. A. Konkar, A. Madhukar, and P. Chen "Creating Three-Dimensionally Confined Nanoscale Strained Structures via Substrate Encoded Size Reducing Epitaxy and the Enhancement of Critical Thickness of Island Formation" Mat. Res. Soc. Symp. Proc v 380 (1998)

2. A. Konkar, A. Madhukar, and P. Chen, "Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates." Applied Physics Letters 72, 220 (1998)

3. K.C. Rajkumar, A. Madhukar, P. Chen, A. Konkar, L. Chen, K. Rammohan, D.H. Rich, "Realization of Three-Dimensionally Confined Structures via OneStep In-Situ MBE on Appropriately Patterned GaAs (111)." JVSTB 12 (2) 1071 (1994).

4. A. Madhukar, "Growth of semiconductor heterostructures on patterned substrates - defect reduction and nanostructures." Thin Solid Films 231, 8 (1993).

5. S. Guha, A. Madhukar, K. Kaviani, Li Chen, R. Kuchibholtla, R. Kapre, M. Hyugachi, Z. Xie, "Molecular Beam Epitaxical Growth of AlxGa1-xAs on Non-Planar Patterned GaAs (100)" Mat. Res. Soc. Symp. Proc. v 145 (1989)

VI. Simulations of Stress in Semiconductor Nanostructures

1. M.A. Makeec and A. Madhukar, "Stress Relaxation in Lattice-Mismatched Semiconductor Overlayers on Patterned Substrates: Atomistic Simulation Studies"in "Handbook of Semiconductor Nanostructures and Nanodevices," Eds. A.A. Balandin and K.L. Wang, American Scientific Publishers, vol X, ch. 7 (2006)

2. Maxim A. Makeev, and Anupam Madhukar, "Calculation of Vertical Correlation Probability in Ge/Si(001) Shallow Island Quantum Dot Multilayer Systems." Nano Letters, 6 , 1279 (2006)

3. Maxim A. Makeev, Rajiv K. Kalia, Aiichiro Nakano, Priya Vashishta, and Anupam Madhukar, "Effect of geometry on stress relaxation in InAs/GaAs rectangular nanomesas: Multimillion-atom molecular dynamics simulations." Journal of Applied Physics, 98 , 114313 (2005)

4. M. Makeev, W. Yu, and A. Madhukar, "Atomic scale stresses and strains in Ge/Si(001) nanopixels: An atomistic simulation study." Journal of Applied Physics 96, 4429 (2004)

5. M. Makeev, W. Yu, and A. Madhukar, "Stress distributions and energetics in the laterally ordered systems of buried pyramidal Ge/Si(001) islands: An atomistic simulation study." Physical Review B 68, 195301 (2003)

6. X. Su, R.K. Kalia, A. Nakano, P. Vashishta, and A. Madhukar, "InAs/GaAs square nanomesas: Multimillion-atom molecular dynamics simulations on parallel computers." Journal of Applied Physics 94, 6762 (2003)

7. M. Makeev and A. Madhukar, "Large-scale atomistic simulations of atomic displacements, stresses, and strains in nanoscale mesas: Effect of mesa edges, corners, and interfaces." Applied Physics Letters 81, 3789 (2002)

8. M. Makeev and A. Madhukar, "Simulations of Atomic Level Stresses in Systems of Buried Ge/Si Islands." Physical Review Letters 86, 5542 (2001)

9. X. Su, R.K. Kalia, A. Nakano, P. Vashishta, A. Madhukar, "Million-atom molecular dynamics simulation of flat InAs overlayers with Self-limiting thickness on GaAs square nanomesas." Applied Physics Letters 78, 3717 (2001)

10. X. Su, R.K. Kalia, A. Nakano, P. Vashishta, and A. Madhukar, "Critical lateral size for stress domain formation in InAs/GaAs square nanomesas: A multimillion-atom molecular dynamics study." Applied Physics Letters 79, 4457 (2001)

11. W. Yu and A. Madhukar, "Molecular Dynamics Study of Coherent Island Energetics, Stresses, and Strains in Highly Strained Epitaxy" Physical Review Letters 79, 905 (1997)

12. A. Madhukar, W. Yu, R. Viswanathan, and P. Chen, "Some Computer Simulations of Semiconductor Thin Film Growth and Strain Relaxation in a Unified Atomistic and Kinetic Model. Mat. Res. Soc. Symp. Proc. v 408 (1996)

VII. Nanoparticle Manipulation on Surfaces

1. S. Meltzer, R. Resch, B.E. Koel, M.E. Thompson, A. Madhukar, A.A.G. Requicha, and P. Will, "Fabrication of nanostructures by hydroxylamine seeding of gold nanoparticle templates." Langmuir 17, 1713 (2001)

2. Roland Resch, Christof Baur, Alejandro Bugacov, Bruce E. Koel, Pierre M. Echternach, Anupam Madhukar, Nicolas Montoya, Aristides A. G. Requicha, and Peter Will, "Linking and Manipulation of Gold Multinanoparticle Structures Using Dithiols and Scanning Force Microscopy." Journal of Physical Chemistry B 103, 3647 (1999)

3. T R Ramachandran, C Baur, A Bugacov, A Madhukar, B E Koel, A Requicha and C Gazen, "Direct and controlled manipulation of nanometer-sized particles using the non-contact atomic force microscope." Nanotechnology 9, 237 (1998)